VS-VSKC196/16PBF

Vishay Semiconductor - Diodes Division VS-VSKC196/16PBF

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • VS-VSKC196/16PBF
  • Vishay Semiconductor - Diodes Division
  • DIODE GEN 1.6KV 97.5A INTAPAK
  • Diodes - Rectifiers - Arrays
  • VS-VSKC196/16PBF Лист данных
  • INT-A-Pak
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBFLead free / RoHS Compliant
  • 20607
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
VS-VSKC196/16PBF
Category
Diodes - Rectifiers - Arrays
Manufacturer
Vishay Semiconductor - Diodes Division
Description
DIODE GEN 1.6KV 97.5A INTAPAK
Package
Bulk
Series
-
Mounting Type
Chassis Mount
Package / Case
INT-A-Pak
Supplier Device Package
INT-A-PAK
Diode Type
Standard
Voltage - Forward (Vf) (Max) @ If
-
Current - Reverse Leakage @ Vr
20 mA @ 1600 V
Diode Configuration
1 Pair Series Connection
Voltage - DC Reverse (Vr) (Max)
1600 V
Current - Average Rectified (Io) (per Diode)
97.5A
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-55°C ~ 175°C
Package_case
INT-A-Pak

VS-VSKC196/16PBF Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о VS-VSKC196/16PBF ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF
VS-VSKD600-20PBF,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF
VS-VSKD600-20PBF

DIODE GEN 2KV 300A MAGNAPAK

VS-VSKD600-16PBF,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF
VS-VSKD600-16PBF

DIODE GEN 2KV 300A MAGNAPAK

VS-VSKD600-12PBF,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF
VS-VSKD600-12PBF

DIODE GEN 2KV 300A MAGNAPAK

VS-VSKD600-08PBF,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF
VS-VSKD600-08PBF

DIODE GEN 2KV 300A MAGNAPAK

VS-20CTH03FP-N3,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF
VS-20CTH03FP-N3

DIODE GEN 2KV 300A MAGNAPAK

VS-30CTH02-N3,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF
VS-30CTH02-N3

DIODE GEN 2KV 300A MAGNAPAK

VS-30CTQ060SPBF,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF
VS-30CTQ060SPBF

DIODE GEN 2KV 300A MAGNAPAK

VS-20CTQ040-N3,https://www.jinftry.ru/product_detail/VS-VSKC196-16PBF
VS-20CTQ040-N3

DIODE GEN 2KV 300A MAGNAPAK

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

Datasheet and working principle of 1N4001 rectifier diode

Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP