Vishay Semiconductor - Diodes Division VS-GB75LA60UF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- VS-GB75LA60UF
- Vishay Semiconductor - Diodes Division
- IGBT MOD 600V 109A 447W SOT227
- Transistors - IGBTs - Modules
- VS-GB75LA60UF Лист данных
- SOT-227-4, miniBLOC
- Tube
-
Lead free / RoHS Compliant - 1525
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number VS-GB75LA60UF |
| Category Transistors - IGBTs - Modules |
| Manufacturer Vishay Semiconductor - Diodes Division |
| Description IGBT MOD 600V 109A 447W SOT227 |
| Package Tube |
| Series - |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Chassis Mount |
| Package / Case SOT-227-4, miniBLOC |
| Supplier Device Package SOT-227 |
| Power - Max 447 W |
| Configuration Single |
| Current - Collector (Ic) (Max) 109 A |
| Voltage - Collector Emitter Breakdown (Max) 600 V |
| Current - Collector Cutoff (Max) 50 µA |
| IGBT Type NPT |
| Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A |
| Input Capacitance (Cies) @ Vce - |
| Input Standard |
| NTC Thermistor No |
| Package_case SOT-227-4, miniBLOC |
VS-GB75LA60UF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о VS-GB75LA60UF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
VS-GB75LA60UF сопутствующие товары
Комментарии
Vishay Semiconductor - Diodes Division
VS-GB05XP120KTPBF
IGBT MODULE 1200V 0 76W MTP
CPV363M4U
IGBT MODULE 1200V 0 76W MTP
CPV362M4U
IGBT MODULE 1200V 0 76W MTP
CPV362M4K
IGBT MODULE 1200V 0 76W MTP
CPV362M4F
IGBT MODULE 1200V 0 76W MTP
VS-CPV362M4UPBF
IGBT MODULE 1200V 0 76W MTP
VS-CPV362M4KPBF
IGBT MODULE 1200V 0 76W MTP
CPV364M4U
IGBT MODULE 1200V 0 76W MTP
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Vishay TSOP753/TSOP755 infrared receiver module features
Vishay TSOP753/TSOP755 infrared receiver module features
Vishay TSOP753/TSOP755 infrared receiver module is mainly used for miniaturized infrared receiver module of infrared remote control system. Two PIN diodes and a preamplifier are assembled on a lead frame, and the epoxy resin package contains an IR filter. The TSOP753 series has been optimized in design to suppress all stray pulses of CFL and other energy-saving lamps. Continuous transmission, AGC3 can also suppress some data signals. The
