Vishay Semiconductor - Diodes Division VS-GB75DA120UP
- VS-GB75DA120UP
- Vishay Semiconductor - Diodes Division
- IGBT MODULE 1200V 658W SOT227
- Transistors - IGBTs - Modules
- VS-GB75DA120UP Лист данных
- SOT-227-4, miniBLOC
- Bulk
- Lead free / RoHS Compliant
- 3710
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number VS-GB75DA120UP |
Category Transistors - IGBTs - Modules |
Manufacturer Vishay Semiconductor - Diodes Division |
Description IGBT MODULE 1200V 658W SOT227 |
Package Bulk |
Series - |
Operating Temperature -40°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SOT-227-4, miniBLOC |
Supplier Device Package SOT-227 |
Power - Max 658 W |
Configuration Single |
Current - Collector (Ic) (Max) - |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 250 µA |
IGBT Type NPT |
Vce(on) (Max) @ Vge, Ic 3.8V @ 15V, 75A |
Input Capacitance (Cies) @ Vce - |
Input Standard |
NTC Thermistor No |
Package_case SOT-227-4, miniBLOC |
VS-GB75DA120UP Гарантии
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Vishay Semiconductor - Diodes Division
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