VS-6FR120

Vishay Semiconductor - Diodes Division VS-6FR120

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • VS-6FR120
  • Vishay Semiconductor - Diodes Division
  • DIODE GEN PURP 1.2KV 6A DO203AA
  • Diodes - Rectifiers - Single
  • VS-6FR120 Лист данных
  • DO-203AA, DO-4, Stud
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/VS-6FR120Lead free / RoHS Compliant
  • 3439
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
VS-6FR120
Category
Diodes - Rectifiers - Single
Manufacturer
Vishay Semiconductor - Diodes Division
Description
DIODE GEN PURP 1.2KV 6A DO203AA
Package
Bulk
Series
-
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AA, DO-4, Stud
Supplier Device Package
DO-203AA (DO-4)
Diode Type
Standard, Reverse Polarity
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.1 V @ 19 A
Current - Reverse Leakage @ Vr
12 mA @ 1200 V
Capacitance @ Vr, F
-
Voltage - DC Reverse (Vr) (Max)
1200 V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
-
Operating Temperature - Junction
-65°C ~ 175°C
Package_case
DO-203AA, DO-4, Stud

VS-6FR120 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/VS-6FR120

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/VS-6FR120

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/VS-6FR120

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о VS-6FR120 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Vishay Semiconductor - Diodes Division
Vishay Semiconductor - Diodes Division,https://www.jinftry.ru/product_detail/VS-6FR120
VS-16FLR20S05,https://www.jinftry.ru/product_detail/VS-6FR120
VS-16FLR20S05

DIODE GEN PURP 200V 16A DO203AA

VS-16FL20S05,https://www.jinftry.ru/product_detail/VS-6FR120
VS-16FL20S05

DIODE GEN PURP 200V 16A DO203AA

VS-100BGQ100HF4,https://www.jinftry.ru/product_detail/VS-6FR120
VS-100BGQ100HF4

DIODE GEN PURP 200V 16A DO203AA

VS-1N1185A,https://www.jinftry.ru/product_detail/VS-6FR120
VS-1N1185A

DIODE GEN PURP 200V 16A DO203AA

VS-EBU8006HF4,https://www.jinftry.ru/product_detail/VS-6FR120
VS-EBU8006HF4

DIODE GEN PURP 200V 16A DO203AA

VS-100BGQ045HF4,https://www.jinftry.ru/product_detail/VS-6FR120
VS-100BGQ045HF4

DIODE GEN PURP 200V 16A DO203AA

VS-60EPU04-N3,https://www.jinftry.ru/product_detail/VS-6FR120
VS-60EPU04-N3

DIODE GEN PURP 200V 16A DO203AA

VS-1N1183R,https://www.jinftry.ru/product_detail/VS-6FR120
VS-1N1183R

DIODE GEN PURP 200V 16A DO203AA

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001? "1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes. 1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.

ON NTD2955G series packages and features are different

NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP