Vishay Semiconductor - Diodes Division VS-60EPU04PBF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- VS-60EPU04PBF
- Vishay Semiconductor - Diodes Division
- DIODE GEN PURP 400V 60A TO247AC
- Diodes - Rectifiers - Single
- VS-60EPU04PBF Лист данных
- TO-247-2
- Tube
-
Lead free / RoHS Compliant - 4392
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number VS-60EPU04PBF |
| Category Diodes - Rectifiers - Single |
| Manufacturer Vishay Semiconductor - Diodes Division |
| Description DIODE GEN PURP 400V 60A TO247AC |
| Package Tube |
| Series FRED Pt® |
| Mounting Type Through Hole |
| Package / Case TO-247-2 |
| Supplier Device Package TO-247AC Modified |
| Diode Type Standard |
| Current - Average Rectified (Io) 60A |
| Voltage - Forward (Vf) (Max) @ If 1.25 V @ 60 A |
| Current - Reverse Leakage @ Vr 50 µA @ 400 V |
| Capacitance @ Vr, F - |
| Voltage - DC Reverse (Vr) (Max) 400 V |
| Speed Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) 85 ns |
| Operating Temperature - Junction -55°C ~ 175°C |
| Package_case TO-247-2 |
VS-60EPU04PBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о VS-60EPU04PBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
VS-60EPU04PBF сопутствующие товары
Комментарии
Vishay Semiconductor - Diodes Division
VS-60APU02PBF
DIODE GEN PURP 200V 60A TO247AC
VS-60EPU02PBF
DIODE GEN PURP 200V 60A TO247AC
VS-20ETF06SPBF
DIODE GEN PURP 200V 60A TO247AC
VS-20ETF06PBF
DIODE GEN PURP 200V 60A TO247AC
FESF8AT-E3/45
DIODE GEN PURP 200V 60A TO247AC
V20150SG-E3/4W
DIODE GEN PURP 200V 60A TO247AC
VBT2080S-M3/4W
DIODE GEN PURP 200V 60A TO247AC
VBT2080S-M3/8W
DIODE GEN PURP 200V 60A TO247AC
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
The performance of Vishay's new 24 V XClampR transient voltage suppressor has reached the advanced level in the industry
The performance of Vishay's new 24 V XClampR transient voltage suppressor has reached the advanced level in the industry
Source: Contributed by the manufacturer • Author: Vishay • 2022-07-01 10:12 • 449 reads • 0 comments
The performance of Vishay's new 24 V XClampR transient voltage suppressor has reached the advanced level in the industry
High power consumption and high pulse current of bidirectional devices combined with high temperature stability are suitable for automotive, communica
