Vishay Semiconductor - Diodes Division VS-26MB10A
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- VS-26MB10A
- Vishay Semiconductor - Diodes Division
- BRIDGE RECT 1PHASE 100V 25A D-34
- Diodes - Bridge Rectifiers
- VS-26MB10A Лист данных
- 4-Square, D-34
- Bulk
-
Lead free / RoHS Compliant - 9061
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number VS-26MB10A |
| Category Diodes - Bridge Rectifiers |
| Manufacturer Vishay Semiconductor - Diodes Division |
| Description BRIDGE RECT 1PHASE 100V 25A D-34 |
| Package Bulk |
| Series - |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type QC Terminal |
| Package / Case 4-Square, D-34 |
| Supplier Device Package D-34 |
| Technology Standard |
| Diode Type Single Phase |
| Voltage - Peak Reverse (Max) 100 V |
| Current - Average Rectified (Io) 25 A |
| Voltage - Forward (Vf) (Max) @ If - |
| Current - Reverse Leakage @ Vr 10 µA @ 100 V |
| Package_case 4-Square, D-34 |
VS-26MB10A Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о VS-26MB10A ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
VS-26MB10A сопутствующие товары
Комментарии
Vishay Semiconductor - Diodes Division
VS-GBPC3512W
BRIDGE RECT 1P 1.2KV 35A GBPC-W
GBPC3506-E4/51
BRIDGE RECT 1P 1.2KV 35A GBPC-W
GBPC3504W-E4/51
BRIDGE RECT 1P 1.2KV 35A GBPC-W
GBPC2502W-E4/51
BRIDGE RECT 1P 1.2KV 35A GBPC-W
KBU8G-E4/51
BRIDGE RECT 1P 1.2KV 35A GBPC-W
KBU4D-E4/51
BRIDGE RECT 1P 1.2KV 35A GBPC-W
GSIB2580-E3/45
BRIDGE RECT 1P 1.2KV 35A GBPC-W
GSIB2560-E3/45
BRIDGE RECT 1P 1.2KV 35A GBPC-W
What is a bipolar transistor and what is its operating mode
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
