VBO25-12NO2

IXYS VBO25-12NO2

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • VBO25-12NO2
  • IXYS
  • BRIDGE RECT 1P 1.2KV 38A FO-A
  • Diodes - Bridge Rectifiers
  • VBO25-12NO2 Лист данных
  • 4-Square, FO-A
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/VBO25-12NO2Lead free / RoHS Compliant
  • 8534
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
VBO25-12NO2
Category
Diodes - Bridge Rectifiers
Manufacturer
IXYS
Description
BRIDGE RECT 1P 1.2KV 38A FO-A
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
QC Terminal
Package / Case
4-Square, FO-A
Supplier Device Package
FO-A
Technology
Standard
Diode Type
Single Phase
Voltage - Peak Reverse (Max)
1.2 kV
Current - Average Rectified (Io)
38 A
Voltage - Forward (Vf) (Max) @ If
1.36 V @ 55 A
Current - Reverse Leakage @ Vr
300 µA @ 1200 V
Package_case
4-Square, FO-A

VBO25-12NO2 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/VBO25-12NO2

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/VBO25-12NO2

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/VBO25-12NO2

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о VBO25-12NO2 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/VBO25-12NO2
VBO40-16NO6,https://www.jinftry.ru/product_detail/VBO25-12NO2
VBO40-16NO6

BRIDGE RECT 1P 1.6KV 40A SOT227B

VUO98-14NO7,https://www.jinftry.ru/product_detail/VBO25-12NO2
VUO98-14NO7

BRIDGE RECT 1P 1.6KV 40A SOT227B

VBO20-12NO2,https://www.jinftry.ru/product_detail/VBO25-12NO2
VBO20-12NO2

BRIDGE RECT 1P 1.6KV 40A SOT227B

DMA150YC1600NA,https://www.jinftry.ru/product_detail/VBO25-12NO2
DMA150YC1600NA

BRIDGE RECT 1P 1.6KV 40A SOT227B

DMA150YA1600NA,https://www.jinftry.ru/product_detail/VBO25-12NO2
DMA150YA1600NA

BRIDGE RECT 1P 1.6KV 40A SOT227B

VBO88-08NO7,https://www.jinftry.ru/product_detail/VBO25-12NO2
VBO88-08NO7

BRIDGE RECT 1P 1.6KV 40A SOT227B

VBO13-16NO2,https://www.jinftry.ru/product_detail/VBO25-12NO2
VBO13-16NO2

BRIDGE RECT 1P 1.6KV 40A SOT227B

VUO30-08NO3,https://www.jinftry.ru/product_detail/VBO25-12NO2
VUO30-08NO3

BRIDGE RECT 1P 1.6KV 40A SOT227B

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

Datasheet and working principle of 1N4001 rectifier diode

Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP