MDD US2M
- US2M
- MDD
- High Efficiency SMB 1KV 2A
- Diodes - Rectifiers - Single
- US2M Лист данных
- DO-214AC, SMA
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 16516
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number US2M |
Category Diodes - Rectifiers - Single |
Manufacturer MDD |
Description High Efficiency SMB 1KV 2A |
Package Tape & Reel (TR) |
Series SMA |
Mounting Type Surface Mount |
Package / Case DO-214AC, SMA |
Supplier Device Package SMA |
Diode Type Standard |
Current - Average Rectified (Io) 2A |
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 2 A |
Current - Reverse Leakage @ Vr 5 µA @ 1000 V |
Capacitance @ Vr, F 28pF @ 4V, 1MHz |
Voltage - DC Reverse (Vr) (Max) 1000 V |
Speed Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) 500 ns |
Operating Temperature - Junction -55°C ~ 150°C |
Package_case DO-214AC, SMA |
US2M Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о US2M ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
MDD
RS2M
Fast Recovery SMA 1KV 2A
S2MF
Fast Recovery SMA 1KV 2A
DSK14
Fast Recovery SMA 1KV 2A
1N4007G L
Fast Recovery SMA 1KV 2A
1N4007-T/B
Fast Recovery SMA 1KV 2A
FR107-T/B
Fast Recovery SMA 1KV 2A
SS14F
Fast Recovery SMA 1KV 2A
RS2MB
Fast Recovery SMA 1KV 2A
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.