Infineon Technologies Industrial Power and Controls Americas TZ600N12KOF
- TZ600N12KOF
- Infineon Technologies Industrial Power and Controls Americas
- THYRISTOR MOD VDRM 1200V 1050A
- Thyristors - SCRs - Modules
- TZ600N12KOF Лист данных
- -
- -
- Lead free / RoHS Compliant
- 2904
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number TZ600N12KOF |
Category Thyristors - SCRs - Modules |
Manufacturer Infineon Technologies Industrial Power and Controls Americas |
Description THYRISTOR MOD VDRM 1200V 1050A |
Package - |
Series * |
Package_case - |
TZ600N12KOF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TZ600N12KOF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies Industrial Power and Controls Americas
TZ430N20KOF
THYRISTOR MOD VDRM 2000V 1050A
DT250N16KOF
THYRISTOR MOD VDRM 2000V 1050A
TT330N16AOF
THYRISTOR MOD VDRM 2000V 1050A
TT305N16KOF
THYRISTOR MOD VDRM 2000V 1050A
TZ400N20KOF
THYRISTOR MOD VDRM 2000V 1050A
TT260N22KOF
THYRISTOR MOD VDRM 2000V 1050A
TZ500N18KOF
THYRISTOR MOD VDRM 2000V 1050A
TZ310N20KOF
THYRISTOR MOD VDRM 2000V 1050A
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
Infineon's 300mm thin wafer power semiconductor plant has started
Infineon's 300mm thin wafer power semiconductor plant has started