Taiwan Semiconductor Corporation TSM038N04LCP ROG
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- TSM038N04LCP ROG
- Taiwan Semiconductor Corporation
- MOSFET N-CHANNEL 40V 135A TO252
- Transistors - FETs, MOSFETs - Single
- TSM038N04LCP ROG Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 2908
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number TSM038N04LCP ROG |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Taiwan Semiconductor Corporation |
| Description MOSFET N-CHANNEL 40V 135A TO252 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package TO-252, (D-Pak) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 125W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 135A (Tc) |
| Rds On (Max) @ Id, Vgs 3.8mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 5509 pF @ 20 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
TSM038N04LCP ROG Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TSM038N04LCP ROG ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
TSM038N04LCP ROG сопутствующие товары
Комментарии
Taiwan Semiconductor Corporation
TSM4N60ECP ROG
MOSFET N-CHANNEL 600V 4A TO252
TSM35N10CP ROG
MOSFET N-CHANNEL 600V 4A TO252
TSM10N06CP ROG
MOSFET N-CHANNEL 600V 4A TO252
TSM070NA04LCR RLG
MOSFET N-CHANNEL 600V 4A TO252
TSM1N45DCS RLG
MOSFET N-CHANNEL 600V 4A TO252
TSM033NA03CR RLG
MOSFET N-CHANNEL 600V 4A TO252
TSM4N70CP ROG
MOSFET N-CHANNEL 600V 4A TO252
TSM650N15CR RLG
MOSFET N-CHANNEL 600V 4A TO252
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
