Toshiba Semiconductor and Storage TPH2900ENH,L1Q
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- TPH2900ENH,L1Q
- Toshiba Semiconductor and Storage
- MOSFET N-CH 200V 33A 8SOP
- Transistors - FETs, MOSFETs - Single
- TPH2900ENH,L1Q Лист данных
- 8-PowerVDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 3659
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number TPH2900ENH,L1Q |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N-CH 200V 33A 8SOP |
| Package Cut Tape (CT) |
| Series U-MOSVIII-H |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerVDFN |
| Supplier Device Package 8-SOP Advance (5x5) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 78W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 33A (Ta) |
| Rds On (Max) @ Id, Vgs 29mOhm @ 16.5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 100 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 8-PowerVDFN |
TPH2900ENH,L1Q Гарантии
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