Transphorm TP65H480G4JSG-TR
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- TP65H480G4JSG-TR
- Transphorm
- GANFET N-CH 650V 3.6A 3PQFN
- Transistors - FETs, MOSFETs - Single
- TP65H480G4JSG-TR Лист данных
- 3-SMD, Flat Lead
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 1059
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number TP65H480G4JSG-TR |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Transphorm |
| Description GANFET N-CH 650V 3.6A 3PQFN |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 3-SMD, Flat Lead |
| Supplier Device Package 3-PQFN (5x6) |
| Technology GaNFET (Gallium Nitride) |
| Power Dissipation (Max) 13.2W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs 560mOhm @ 3.4A, 8V |
| Vgs(th) (Max) @ Id 2.8V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs 9 nC @ 8 V |
| Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V |
| Vgs (Max) ±18V |
| Drive Voltage (Max Rds On, Min Rds On) 8V |
| Package_case 3-SMD, Flat Lead |
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