Transphorm TP65H070LSG
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- TP65H070LSG
- Transphorm
- GANFET N-CH 650V 25A 3PQFN
- Transistors - FETs, MOSFETs - Single
- TP65H070LSG Лист данных
- 3-PowerDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 4126
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number TP65H070LSG |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Transphorm |
| Description GANFET N-CH 650V 25A 3PQFN |
| Package Tape & Reel (TR) |
| Series TP65H070L |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 3-PowerDFN |
| Supplier Device Package 3-PQFN (8x8) |
| Technology GaNFET (Cascode Gallium Nitride FET) |
| Power Dissipation (Max) 96W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 25A (Tc) |
| Rds On (Max) @ Id, Vgs 85mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id 4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 400 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 3-PowerDFN |
TP65H070LSG Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TP65H070LSG ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
TP65H070LSG сопутствующие товары
Комментарии
Transphorm
TPD3215M
GANFET 2N-CH 600V 70A MODULE
TPH3208LDG
GANFET 2N-CH 600V 70A MODULE
TPH3206LDGB
GANFET 2N-CH 600V 70A MODULE
TPH3206LDB
GANFET 2N-CH 600V 70A MODULE
TPH3206LSB
GANFET 2N-CH 600V 70A MODULE
TPH3202LS
GANFET 2N-CH 600V 70A MODULE
TPH3206PSB
GANFET 2N-CH 600V 70A MODULE
TPH3205WSBQA
GANFET 2N-CH 600V 70A MODULE
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
