Toshiba Semiconductor and Storage TK65G10N1,RQ
- TK65G10N1,RQ
- Toshiba Semiconductor and Storage
- MOSFET N-CH 100V 65A D2PAK
- Transistors - FETs, MOSFETs - Single
- TK65G10N1,RQ Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 21138
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number TK65G10N1,RQ |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Toshiba Semiconductor and Storage |
Description MOSFET N-CH 100V 65A D2PAK |
Package Tape & Reel (TR) |
Series U-MOSVIII-H |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package D2PAK |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 156W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 65A (Ta) |
Rds On (Max) @ Id, Vgs 4.5mOhm @ 32.5A, 10V |
Vgs(th) (Max) @ Id 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 50 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
TK65G10N1,RQ Гарантии
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• Гарантированное качество
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