Toshiba Semiconductor and Storage TK65E10N1,S1X
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- TK65E10N1,S1X
- Toshiba Semiconductor and Storage
- MOSFET N CH 100V 148A TO220
- Transistors - FETs, MOSFETs - Single
- TK65E10N1,S1X Лист данных
- TO-220-3
- Tube
-
Lead free / RoHS Compliant - 3735
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number TK65E10N1,S1X |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N CH 100V 148A TO220 |
| Package Tube |
| Series U-MOSVIII-H |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 192W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 148A (Ta) |
| Rds On (Max) @ Id, Vgs 4.8mOhm @ 32.5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
TK65E10N1,S1X Гарантии
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