Toshiba Semiconductor and Storage TK5Q60W,S1VQ
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- TK5Q60W,S1VQ
- Toshiba Semiconductor and Storage
- MOSFET N CH 600V 5.4A IPAK
- Transistors - FETs, MOSFETs - Single
- TK5Q60W,S1VQ Лист данных
- TO-251-3 Stub Leads, IPak
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 28101
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number TK5Q60W,S1VQ |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Toshiba Semiconductor and Storage |
| Description MOSFET N CH 600V 5.4A IPAK |
| Package Cut Tape (CT) |
| Series DTMOSIV |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-251-3 Stub Leads, IPak |
| Supplier Device Package I-Pak |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 60W (Tc) |
| FET Type N-Channel |
| FET Feature Super Junction |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 5.4A (Ta) |
| Rds On (Max) @ Id, Vgs 900mOhm @ 2.7A, 10V |
| Vgs(th) (Max) @ Id 3.7V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 300 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-251-3 Stub Leads, IPak |
TK5Q60W,S1VQ Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TK5Q60W,S1VQ ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
TK5Q60W,S1VQ сопутствующие товары
Комментарии
Toshiba Semiconductor and Storage
TK6A80E,S4X
MOSFET N-CH 800V 6A TO220SIS
TK40A10N1,S4X
MOSFET N-CH 800V 6A TO220SIS
TK40E10N1,S1X
MOSFET N-CH 800V 6A TO220SIS
TK7A90E,S4X
MOSFET N-CH 800V 6A TO220SIS
TK9A90E,S4X
MOSFET N-CH 800V 6A TO220SIS
TK5A60W,S4VX
MOSFET N-CH 800V 6A TO220SIS
TK56A12N1,S4X
MOSFET N-CH 800V 6A TO220SIS
TK11A65W,S5X
MOSFET N-CH 800V 6A TO220SIS
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
