Rohm Semiconductor TFZVTR27B
- TFZVTR27B
- Rohm Semiconductor
- DIODE ZENER 27V 500MW TUMD2M
- Diodes - Zener - Single
- TFZVTR27B Лист данных
- 2-SMD, Flat Lead
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4329
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number TFZVTR27B |
Category Diodes - Zener - Single |
Manufacturer Rohm Semiconductor |
Description DIODE ZENER 27V 500MW TUMD2M |
Package Cut Tape (CT) |
Series - |
Operating Temperature -55°C ~ 150°C |
Mounting Type Surface Mount |
Package / Case 2-SMD, Flat Lead |
Supplier Device Package TUMD2M |
Tolerance - |
Power - Max 500 mW |
Voltage - Forward (Vf) (Max) @ If - |
Current - Reverse Leakage @ Vr 200 nA @ 21 V |
Voltage - Zener (Nom) (Vz) 27 V |
Impedance (Max) (Zzt) 45 Ohms |
Package_case 2-SMD, Flat Lead |
TFZVTR27B Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TFZVTR27B ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Rohm Semiconductor
TFZVTR4.7B
DIODE ZENER 4.7V 500MW TUMD2M
TFZVTR2.4B
DIODE ZENER 4.7V 500MW TUMD2M
TFZVTR8.2B
DIODE ZENER 4.7V 500MW TUMD2M
TFZVTR5.6B
DIODE ZENER 4.7V 500MW TUMD2M
EDZTE6127B
DIODE ZENER 4.7V 500MW TUMD2M
TFZVTR3.3B
DIODE ZENER 4.7V 500MW TUMD2M
TFZVTR3.0B
DIODE ZENER 4.7V 500MW TUMD2M
TFZVTR15B
DIODE ZENER 4.7V 500MW TUMD2M
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications: