Toshiba Semiconductor and Storage TBAT54C,LM
- TBAT54C,LM
- Toshiba Semiconductor and Storage
- DIODE SCHOTTKY 30V 140MA SOT23
- Diodes - Rectifiers - Arrays
- TBAT54C,LM Лист данных
- TO-236-3, SC-59, SOT-23-3
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 3682
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number TBAT54C,LM |
Category Diodes - Rectifiers - Arrays |
Manufacturer Toshiba Semiconductor and Storage |
Description DIODE SCHOTTKY 30V 140MA SOT23 |
Package Jinftry-Reel® |
Series - |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 |
Diode Type Schottky |
Voltage - Forward (Vf) (Max) @ If 580 mV @ 100 mA |
Current - Reverse Leakage @ Vr 2 µA @ 25 V |
Diode Configuration 1 Pair Common Cathode |
Voltage - DC Reverse (Vr) (Max) 30 V |
Current - Average Rectified (Io) (per Diode) 140mA |
Speed Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr) 1.5 ns |
Operating Temperature - Junction 150°C (Max) |
Package_case TO-236-3, SC-59, SOT-23-3 |
TBAT54C,LM Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о TBAT54C,LM ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Toshiba Semiconductor and Storage
HN2D03F(TE85L,F)
DIODE ARRAY GP 400V 100MA SM6
HN2S03FE(TE85L,F)
DIODE ARRAY GP 400V 100MA SM6
HN1D03FU,LF
DIODE ARRAY GP 400V 100MA SM6
1SS382TE85LF
DIODE ARRAY GP 400V 100MA SM6
1SS374(TE85L,F)
DIODE ARRAY GP 400V 100MA SM6
1SS362FV,L3F
DIODE ARRAY GP 400V 100MA SM6
1SS309(TE85L,F)
DIODE ARRAY GP 400V 100MA SM6
HN2D01JE(TE85L,F)
DIODE ARRAY GP 400V 100MA SM6
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i