STMicroelectronics STP80NF70
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- STP80NF70
- STMicroelectronics
- MOSFET N-CH 68V 98A TO220AB
- Transistors - FETs, MOSFETs - Single
- STP80NF70 Лист данных
- TO-220-3
- Tube
-
Lead free / RoHS Compliant - 4959
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number STP80NF70 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer STMicroelectronics |
| Description MOSFET N-CH 68V 98A TO220AB |
| Package Tube |
| Series STripFET™ II |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 190W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 68 V |
| Current - Continuous Drain (Id) @ 25°C 98A (Tc) |
| Rds On (Max) @ Id, Vgs 9.8mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
STP80NF70 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о STP80NF70 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
STP80NF70 сопутствующие товары
Комментарии
STMicroelectronics
STF16N60M2
MOSFET N-CH 600V 12A TO220FP
STFH13N60M2
MOSFET N-CH 600V 12A TO220FP
STF12N50DM2
MOSFET N-CH 600V 12A TO220FP
STP16N60M2
MOSFET N-CH 600V 12A TO220FP
STFU24N60M2
MOSFET N-CH 600V 12A TO220FP
STP10LN80K5
MOSFET N-CH 600V 12A TO220FP
STP18N60DM2
MOSFET N-CH 600V 12A TO220FP
STFU18N65M2
MOSFET N-CH 600V 12A TO220FP
Tl431 ,Tl431A and Tl432 -transistor datasheet product information and applications
Tl431 Tl432 -transistor datasheet product information and applications
TL431 is a classic, adjustable, three-terminal voltage regulator that is widely used in power supply design. The following is a brief introduction to basic product information, manufacturer and application areas of TL431:
product information:
1. Description: The TL431 is an adjustable precision voltage regulator often used as a voltage reference or low power voltage regulator.
2. Voltage range: adjustable from Vre
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
STM TSB621 Low Power Operational Amplifier
STM TSB621 Low Power Operational Amplifier
STM TSB621 Low-Power Operational Amplifiers are general-purpose dual operational amplifiers with an extended operating supply voltage range (2.7V - 36V) and rail-to-rail outputs. The TSB621 offers an excellent speed/power ratio and 1.7MHz gain bandwidth while consuming less than 375µA per operator on a 36V supply. The TSB621 amplifier in a SOT23-5 package has an operating temperature range of -40°C to +125°C, making it suitable for applications where b
STM STP80N450K6 800V N-channel power MOSFET
STM STP80N450K6 800V N-channel power MOSFET
STM STP80N450K6 800V N-channel power MOSFET is a very high voltage N-channel power MOSFET designed using the ultimate MDmesh K6 technology. This technology is based on STM's 20 years of experience in super junction technology. For applications requiring high power density and high efficiency, the result is that the on resistance and gate charge per area are best in the same class.
features
Excellent RDS (on) x region
Excellent FOM (quality factor)
