STMicroelectronics STGWA80H65DFB
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- STGWA80H65DFB
- STMicroelectronics
- IGBT BIPO 650V 80A TO247-3
- Transistors - IGBTs - Single
- STGWA80H65DFB Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 23366
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number STGWA80H65DFB |
| Category Transistors - IGBTs - Single |
| Manufacturer STMicroelectronics |
| Description IGBT BIPO 650V 80A TO247-3 |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247 Long Leads |
| Power - Max 469 W |
| Input Type Standard |
| Reverse Recovery Time (trr) 85 ns |
| Current - Collector (Ic) (Max) 120 A |
| Voltage - Collector Emitter Breakdown (Max) 650 V |
| IGBT Type Trench Field Stop |
| Vce(on) (Max) @ Vge, Ic 2V @ 15V, 80A |
| Gate Charge 414 nC |
| Td (on/off) @ 25°C 84ns/280ns |
| Test Condition 400V, 80A, 10Ohm, 15V |
| Current - Collector Pulsed (Icm) 240 A |
| Switching Energy 2.1mJ (on), 1.5mJ (off) |
| Package_case TO-247-3 |
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