STMicroelectronics STB4NK60Z-1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- STB4NK60Z-1
- STMicroelectronics
- MOSFET N-CH 600V 4A I2PAK
- Transistors - FETs, MOSFETs - Single
- STB4NK60Z-1 Лист данных
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 22951
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number STB4NK60Z-1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer STMicroelectronics |
| Description MOSFET N-CH 600V 4A I2PAK |
| Package Jinftry-Reel® |
| Series SuperMESH™ |
| Operating Temperature 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package I2PAK |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 70W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 4A (Tc) |
| Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-262-3 Long Leads, I²Pak, TO-262AA |
STB4NK60Z-1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о STB4NK60Z-1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
STB4NK60Z-1 сопутствующие товары
Комментарии
STMicroelectronics
STP9N60M2
MOSFET N-CH 600V 5.5A TO220
STP105N3LL
MOSFET N-CH 600V 5.5A TO220
STP4N80K5
MOSFET N-CH 600V 5.5A TO220
STF9N65M2
MOSFET N-CH 600V 5.5A TO220
STF6N80K5
MOSFET N-CH 600V 5.5A TO220
STI10N62K3
MOSFET N-CH 600V 5.5A TO220
STP2N105K5
MOSFET N-CH 600V 5.5A TO220
STP5N95K5
MOSFET N-CH 600V 5.5A TO220
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
Three-Phase SiC Gate Driver Silicon Carbide Applications
Three-Phase SiC Gate Driver Silicon Carbide Applications
The design of the CXT-PLA3SA12450AA three-phase gate driver is derived from the fully tested and verified CMT-TIT8243 [1, 2] and CMT-TIT0697 [3] single-phase gate driver boards, respectively designed for 62mm 1200V/300A and Fast switching XM3 1200V/450A SiC MOSFET power module (see Figure 4). The three-phase gate driver is optimized to be mounted directly on top of the CXTPLA3SA12450 power module, thanks to a more compact transformer de
