Vishay Siliconix SIZ730DT-T1-GE3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- SIZ730DT-T1-GE3
- Vishay Siliconix
- MOSFET 2N-CH 30V 16A 6-POWERPAIR
- Transistors - FETs, MOSFETs - Arrays
- SIZ730DT-T1-GE3 Лист данных
- 6-PowerPair™
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 1415
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number SIZ730DT-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer Vishay Siliconix |
| Description MOSFET 2N-CH 30V 16A 6-POWERPAIR |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 6-PowerPair™ |
| Supplier Device Package 6-PowerPair™ |
| Power - Max 27W, 48W |
| FET Type 2 N-Channel (Half Bridge) |
| FET Feature Logic Level Gate |
| Drain to Source Voltage (Vdss) 30V |
| Current - Continuous Drain (Id) @ 25°C 16A, 35A |
| Rds On (Max) @ Id, Vgs 9.3mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 830pF @ 15V |
| Package_case 6-PowerPair™ |
SIZ730DT-T1-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SIZ730DT-T1-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
SIZ730DT-T1-GE3 сопутствующие товары
Комментарии
Vishay Siliconix
SQJ202EP-T1_GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO
SQJB90EP-T1_GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO
SI5504BDC-T1-GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO
SQJ200EP-T1_GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO
SIZ342DT-T1-GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO
SI4590DY-T1-GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO
SI3590DV-T1-GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO
SISB46DN-T1-GE3
MOSFET 2N-CH 12V 20A/60A PPAK SO
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
