Vishay Siliconix SISS73DN-T1-GE3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- SISS73DN-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 150V 4.4A/16.2A PPAK
- Transistors - FETs, MOSFETs - Single
- SISS73DN-T1-GE3 Лист данных
- PowerPAK® 1212-8S
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 4655
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number SISS73DN-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 150V 4.4A/16.2A PPAK |
| Package Jinftry-Reel® |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case PowerPAK® 1212-8S |
| Supplier Device Package PowerPAK® 1212-8S |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 150 V |
| Current - Continuous Drain (Id) @ 25°C 4.4A (Ta), 16.2A (Tc) |
| Rds On (Max) @ Id, Vgs 125mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 719 pF @ 75 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case PowerPAK® 1212-8S |
SISS73DN-T1-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SISS73DN-T1-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
SISS73DN-T1-GE3 сопутствующие товары
Комментарии
Vishay Siliconix
SQJ431AEP-T1_GE3
MOSFET P-CH 200V 9.4A PPAK SO-8
SISS26DN-T1-GE3
MOSFET P-CH 200V 9.4A PPAK SO-8
SIR878BDP-T1-RE3
MOSFET P-CH 200V 9.4A PPAK SO-8
SIR104LDP-T1-RE3
MOSFET P-CH 200V 9.4A PPAK SO-8
SIR106ADP-T1-RE3
MOSFET P-CH 200V 9.4A PPAK SO-8
SIRA80DP-T1-RE3
MOSFET P-CH 200V 9.4A PPAK SO-8
SIR873DP-T1-GE3
MOSFET P-CH 200V 9.4A PPAK SO-8
SIR626LDP-T1-RE3
MOSFET P-CH 200V 9.4A PPAK SO-8
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
