Vishay Siliconix SIS415DNT-T1-GE3
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- SIS415DNT-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 20V 35A PPAK1212-8
- Transistors - FETs, MOSFETs - Single
- SIS415DNT-T1-GE3 Лист данных
- PowerPAK® 1212-8
- Bulk
-
Lead free / RoHS Compliant - 707
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SIS415DNT-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 20V 35A PPAK1212-8 |
| Package Bulk |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case PowerPAK® 1212-8 |
| Supplier Device Package PowerPAK® 1212-8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.7W (Ta), 52W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 35A (Tc) |
| Rds On (Max) @ Id, Vgs 4mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 5460 pF @ 10 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V |
| Package_case PowerPAK® 1212-8 |
SIS415DNT-T1-GE3 Гарантии
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