Vishay Siliconix SIS108DN-T1-GE3
- SIS108DN-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 80V 6.7A/16A PPAK
- Transistors - FETs, MOSFETs - Single
- SIS108DN-T1-GE3 Лист данных
- PowerPAK® 1212-8
- Bulk
- Lead free / RoHS Compliant
- 7933
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SIS108DN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 80V 6.7A/16A PPAK |
Package Bulk |
Series TrenchFET® Gen IV |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8 |
Supplier Device Package PowerPAK® 1212-8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.2W (Ta), 24W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 80 V |
Current - Continuous Drain (Id) @ 25°C 6.7A (Ta), 16A (Tc) |
Rds On (Max) @ Id, Vgs 34mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 40 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V |
Package_case PowerPAK® 1212-8 |
SIS108DN-T1-GE3 Гарантии
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• Гарантированное качество
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