Vishay Siliconix SIHH27N60EF-T1-GE3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- SIHH27N60EF-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 600V 29A PPAK 8 X 8
- Transistors - FETs, MOSFETs - Single
- SIHH27N60EF-T1-GE3 Лист данных
- 8-PowerTDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 1407
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number SIHH27N60EF-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 600V 29A PPAK 8 X 8 |
| Package Tape & Reel (TR) |
| Series E |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package PowerPAK® 8 x 8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 202W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 29A (Tc) |
| Rds On (Max) @ Id, Vgs 100mOhm @ 13.5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2609 pF @ 100 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 8-PowerTDFN |
SIHH27N60EF-T1-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SIHH27N60EF-T1-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
SIHH27N60EF-T1-GE3 сопутствующие товары
Комментарии
Vishay Siliconix
SIHH068N60E-T1-GE3
MOSFET N-CH 600V 34A PPAK 8 X 8
SIHG70N60AEF-GE3
MOSFET N-CH 600V 34A PPAK 8 X 8
IRF9510PBF-BE3
MOSFET N-CH 600V 34A PPAK 8 X 8
IRF520PBF-BE3
MOSFET N-CH 600V 34A PPAK 8 X 8
IRF620PBF-BE3
MOSFET N-CH 600V 34A PPAK 8 X 8
SQP60N06-15_GE3
MOSFET N-CH 600V 34A PPAK 8 X 8
SQP50N06-09L_GE3
MOSFET N-CH 600V 34A PPAK 8 X 8
SQP25N15-52_GE3
MOSFET N-CH 600V 34A PPAK 8 X 8
What is a bipolar transistor and what is its operating mode
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
