Vishay Siliconix SIHG11N80E-GE3
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- SIHG11N80E-GE3
- Vishay Siliconix
- MOSFET N-CH 800V 12A TO247AC
- Transistors - FETs, MOSFETs - Single
- SIHG11N80E-GE3 Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 3697
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SIHG11N80E-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 800V 12A TO247AC |
| Package Tube |
| Series E |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247AC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 179W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 800 V |
| Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
| Rds On (Max) @ Id, Vgs 440mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 100 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
SIHG11N80E-GE3 Гарантии
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• Гарантированное качество
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Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
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Maximum working temperature: 150°C
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