Vishay Siliconix SIHG026N60EF-GE3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- SIHG026N60EF-GE3
- Vishay Siliconix
- EF SERIES POWER MOSFET WITH FAST
- Transistors - FETs, MOSFETs - Single
- SIHG026N60EF-GE3 Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 13651
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number SIHG026N60EF-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description EF SERIES POWER MOSFET WITH FAST |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247AC |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 521W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 95A (Tc) |
| Rds On (Max) @ Id, Vgs 26mOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 227 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 7926 pF @ 100 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
SIHG026N60EF-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SIHG026N60EF-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
SIHG026N60EF-GE3 сопутствующие товары
Комментарии
Vishay Siliconix
SIUD402ED-T1-GE3
MOSFET N-CH 20V 1A PPAK 0806
SIS822DNT-T1-GE3
MOSFET N-CH 20V 1A PPAK 0806
SI1079X-T1-GE3
MOSFET N-CH 20V 1A PPAK 0806
SIS429DNT-T1-GE3
MOSFET N-CH 20V 1A PPAK 0806
SIA465EDJ-T1-GE3
MOSFET N-CH 20V 1A PPAK 0806
SIA472EDJ-T1-GE3
MOSFET N-CH 20V 1A PPAK 0806
SIS472ADN-T1-GE3
MOSFET N-CH 20V 1A PPAK 0806
SIA430DJT-T4-GE3
MOSFET N-CH 20V 1A PPAK 0806
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
