Vishay Siliconix SIHB24N65EF-GE3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- SIHB24N65EF-GE3
- Vishay Siliconix
- MOSFET N-CH 650V 24A D2PAK
- Transistors - FETs, MOSFETs - Single
- SIHB24N65EF-GE3 Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant - 4652
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number SIHB24N65EF-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 650V 24A D2PAK |
| Package Tube |
| Series E |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package TO-263 (D²Pak) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 250W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 24A (Tc) |
| Rds On (Max) @ Id, Vgs 156mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2774 pF @ 100 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
SIHB24N65EF-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SIHB24N65EF-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
SIHB24N65EF-GE3 сопутствующие товары
Комментарии
Vishay Siliconix
SIHA24N65EF-E3
MOSFET N-CHANNEL 650V 24A TO220
SIHG17N80E-GE3
MOSFET N-CHANNEL 650V 24A TO220
SIHA17N80E-E3
MOSFET N-CHANNEL 650V 24A TO220
SIHP17N80E-GE3
MOSFET N-CHANNEL 650V 24A TO220
SIHA25N60EFL-E3
MOSFET N-CHANNEL 650V 24A TO220
SI1442DH-T1-GE3
MOSFET N-CHANNEL 650V 24A TO220
SIHW61N65EF-GE3
MOSFET N-CHANNEL 650V 24A TO220
SI3456DDV-T1-E3
MOSFET N-CHANNEL 650V 24A TO220
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
