Vishay Siliconix SIHB12N65E-GE3
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- SIHB12N65E-GE3
- Vishay Siliconix
- MOSFET N-CH 650V 12A D2PAK
- Transistors - FETs, MOSFETs - Single
- SIHB12N65E-GE3 Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant - 3617
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SIHB12N65E-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 650V 12A D2PAK |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package D²PAK (TO-263) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 156W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 12A (Tc) |
| Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1224 pF @ 100 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
SIHB12N65E-GE3 Гарантии
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