Vishay Siliconix SIE874DF-T1-GE3
- SIE874DF-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 20V 60A 10POLARPAK
- Transistors - FETs, MOSFETs - Single
- SIE874DF-T1-GE3 Лист данных
- 10-PolarPAK® (L)
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 3633
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SIE874DF-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 20V 60A 10POLARPAK |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 10-PolarPAK® (L) |
Supplier Device Package 10-PolarPAK® (L) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 5.2W (Ta), 125W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 20 V |
Current - Continuous Drain (Id) @ 25°C 60A (Tc) |
Rds On (Max) @ Id, Vgs 1.17mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 10 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 10-PolarPAK® (L) |
SIE874DF-T1-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SIE874DF-T1-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Siliconix
IRFBF20STRLPBF
MOSFET N-CH 900V 1.7A D2PAK
SI4126DY-T1-GE3
MOSFET N-CH 900V 1.7A D2PAK
IRF740ASTRLPBF
MOSFET N-CH 900V 1.7A D2PAK
SUD50P04-09L-E3
MOSFET N-CH 900V 1.7A D2PAK
SUD50P10-43L-E3
MOSFET N-CH 900V 1.7A D2PAK
IRF9620STRLPBF
MOSFET N-CH 900V 1.7A D2PAK
SQ4401EY-T1_GE3
MOSFET N-CH 900V 1.7A D2PAK
SQM40031EL_GE3
MOSFET N-CH 900V 1.7A D2PAK
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.