Vishay Siliconix SI7922DN-T1-GE3
- SI7922DN-T1-GE3
- Vishay Siliconix
- MOSFET 2N-CH 100V 1.8A 1212-8
- Transistors - FETs, MOSFETs - Arrays
- SI7922DN-T1-GE3 Лист данных
- PowerPAK® 1212-8 Dual
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4335
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SI7922DN-T1-GE3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET 2N-CH 100V 1.8A 1212-8 |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® 1212-8 Dual |
Supplier Device Package PowerPAK® 1212-8 Dual |
Power - Max 1.3W |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 100V |
Current - Continuous Drain (Id) @ 25°C 1.8A |
Rds On (Max) @ Id, Vgs 195mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds - |
Package_case PowerPAK® 1212-8 Dual |
SI7922DN-T1-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SI7922DN-T1-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Siliconix
SI7949DP-T1-E3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
SI7913DN-T1-GE3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
SI7228DN-T1-GE3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
SI7288DP-T1-GE3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
SI7216DN-T1-GE3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
SI5908DC-T1-E3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
SI4922BDY-T1-E3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
SIA777EDJ-T1-GE3
MOSFET 2P-CH 60V 3.2A PPAK SO-8
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4