SI7464DP-T1-GE3

Vishay Siliconix SI7464DP-T1-GE3

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  • SI7464DP-T1-GE3
  • Vishay Siliconix
  • MOSFET N-CH 200V 1.8A PPAK SO-8
  • Transistors - FETs, MOSFETs - Single
  • SI7464DP-T1-GE3 Лист данных
  • PowerPAK® SO-8
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/SI7464DP-T1-GE3Lead free / RoHS Compliant
  • 21364
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
SI7464DP-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 200V 1.8A PPAK SO-8
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.8W (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Ta)
Rds On (Max) @ Id, Vgs
240mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package_case
PowerPAK® SO-8

SI7464DP-T1-GE3 Гарантии

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