SI7461DP-T1-E3

Vishay Siliconix SI7461DP-T1-E3

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • SI7461DP-T1-E3
  • Vishay Siliconix
  • MOSFET P-CH 60V 8.6A PPAK SO-8
  • Transistors - FETs, MOSFETs - Single
  • SI7461DP-T1-E3 Лист данных
  • PowerPAK® SO-8
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3Lead free / RoHS Compliant
  • 14150
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
SI7461DP-T1-E3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 60V 8.6A PPAK SO-8
Package
Tape & Reel (TR)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Supplier Device Package
PowerPAK® SO-8
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.9W (Ta)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
8.6A (Ta)
Rds On (Max) @ Id, Vgs
14.5mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
PowerPAK® SO-8

SI7461DP-T1-E3 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о SI7461DP-T1-E3 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Vishay Siliconix
Vishay Siliconix,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3
SIR800DP-T1-GE3,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3
SIR800DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

SIR414DP-T1-GE3,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3
SIR414DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

SI7884BDP-T1-GE3,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3
SI7884BDP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

SI4838BDY-T1-GE3,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3
SI4838BDY-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

SI7157DP-T1-GE3,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3
SI7157DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

SUD50P04-08-GE3,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3
SUD50P04-08-GE3

MOSFET N-CH 20V 50A PPAK SO-8

SIR826DP-T1-GE3,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3
SIR826DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

SIR470DP-T1-GE3,https://www.jinftry.ru/product_detail/SI7461DP-T1-E3
SIR470DP-T1-GE3

MOSFET N-CH 20V 50A PPAK SO-8

2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics

The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.

1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications

1N5819 Schottky Diode Description: 1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.

Model BC547/2N2222/2N4401 can replace 2N3904 transistor

Model BC547/2N2222/2N4401 can replace 2N3904 transistor   2N3904 is a commonly used NPN bipolar transistor (2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP