Vishay Siliconix SI7252DP-T1-GE3
- SI7252DP-T1-GE3
- Vishay Siliconix
- MOSFET 2N-CH 100V 36.7A PPAK 8SO
- Transistors - FETs, MOSFETs - Arrays
- SI7252DP-T1-GE3 Лист данных
- PowerPAK® SO-8 Dual
- Jinftry-Reel®
- Lead free / RoHS Compliant
- 24072
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SI7252DP-T1-GE3 |
Category Transistors - FETs, MOSFETs - Arrays |
Manufacturer Vishay Siliconix |
Description MOSFET 2N-CH 100V 36.7A PPAK 8SO |
Package Jinftry-Reel® |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case PowerPAK® SO-8 Dual |
Supplier Device Package PowerPAK® SO-8 Dual |
Power - Max 46W |
FET Type 2 N-Channel (Dual) |
FET Feature Logic Level Gate |
Drain to Source Voltage (Vdss) 100V |
Current - Continuous Drain (Id) @ 25°C 36.7A |
Rds On (Max) @ Id, Vgs 18mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds 1170pF @ 50V |
Package_case PowerPAK® SO-8 Dual |
SI7252DP-T1-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SI7252DP-T1-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Siliconix
SI4943CDY-T1-GE3
MOSFET 2P-CH 20V 8A 8-SOIC
SI7272DP-T1-GE3
MOSFET 2P-CH 20V 8A 8-SOIC
SI4564DY-T1-GE3
MOSFET 2P-CH 20V 8A 8-SOIC
SI5999EDU-T1-GE3
MOSFET 2P-CH 20V 8A 8-SOIC
SIA517DJ-T1-GE3
MOSFET 2P-CH 20V 8A 8-SOIC
SIA533EDJ-T1-GE3
MOSFET 2P-CH 20V 8A 8-SOIC
SIA519EDJ-T1-GE3
MOSFET 2P-CH 20V 8A 8-SOIC
SI5935CDC-T1-GE3
MOSFET 2P-CH 20V 8A 8-SOIC
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic