Vishay Siliconix SI4900DY-T1-GE3
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- SI4900DY-T1-GE3
- Vishay Siliconix
- MOSFET 2N-CH 60V 5.3A 8-SOIC
- Transistors - FETs, MOSFETs - Arrays
- SI4900DY-T1-GE3 Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 7780
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SI4900DY-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Arrays |
| Manufacturer Vishay Siliconix |
| Description MOSFET 2N-CH 60V 5.3A 8-SOIC |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package 8-SOIC |
| Power - Max 3.1W |
| FET Type 2 N-Channel (Dual) |
| FET Feature Logic Level Gate |
| Drain to Source Voltage (Vdss) 60V |
| Current - Continuous Drain (Id) @ 25°C 5.3A |
| Rds On (Max) @ Id, Vgs 58mOhm @ 4.3A, 10V |
| Vgs(th) (Max) @ Id 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds 665pF @ 15V |
| Package_case 8-SOIC (0.154\", 3.90mm Width) |
SI4900DY-T1-GE3 Гарантии
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