Vishay Siliconix SI4842BDY-T1-E3
- SI4842BDY-T1-E3
- Vishay Siliconix
- MOSFET N-CH 30V 28A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4842BDY-T1-E3 Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Tube
- Lead free / RoHS Compliant
- 4728
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SI4842BDY-T1-E3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 30V 28A 8SO |
Package Tube |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3W (Ta), 6.25W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 28A (Tc) |
Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3650 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
SI4842BDY-T1-E3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SI4842BDY-T1-E3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Siliconix
SQJQ100E-T1_GE3
MOSFET N-CH 40V 200A PPAK 8 X 8
SQJQ410EL-T1_GE3
MOSFET N-CH 40V 200A PPAK 8 X 8
IRLR014
MOSFET N-CH 40V 200A PPAK 8 X 8
IRF9630STRLPBF
MOSFET N-CH 40V 200A PPAK 8 X 8
SUM40010EL-GE3
MOSFET N-CH 40V 200A PPAK 8 X 8
SIR872DP-T1-GE3
MOSFET N-CH 40V 200A PPAK 8 X 8
SIR804DP-T1-GE3
MOSFET N-CH 40V 200A PPAK 8 X 8
SIR892DP-T1-GE3
MOSFET N-CH 40V 200A PPAK 8 X 8
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic