Vishay Siliconix SI4491EDY-T1-GE3
- SI4491EDY-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 30V 17.3A 8SO
- Transistors - FETs, MOSFETs - Single
- SI4491EDY-T1-GE3 Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 19716
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SI4491EDY-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 30V 17.3A 8SO |
Package Cut Tape (CT) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SOIC |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.1W (Ta), 6.9W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta) |
Rds On (Max) @ Id, Vgs 6.5mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4620 pF @ 15 V |
Vgs (Max) ±25V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
SI4491EDY-T1-GE3 Гарантии
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