Vishay Siliconix SI2328DS-T1-GE3
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- SI2328DS-T1-GE3
- Vishay Siliconix
- MOSFET N-CH 100V 1.15A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2328DS-T1-GE3 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 1190
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number SI2328DS-T1-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 100V 1.15A SOT23-3 |
| Package Cut Tape (CT) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package SOT-23-3 (TO-236) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 730mW (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 1.15A (Ta) |
| Rds On (Max) @ Id, Vgs 250mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds - |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-236-3, SC-59, SOT-23-3 |
SI2328DS-T1-GE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о SI2328DS-T1-GE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
SI2328DS-T1-GE3 сопутствующие товары
Комментарии
Vishay Siliconix
SQ2389ES-T1_GE3
MOSFET P-CH 40V 4.1A SOT23-3
SQ3456BEV-T1_GE3
MOSFET P-CH 40V 4.1A SOT23-3
SI2316BDS-T1-E3
MOSFET P-CH 40V 4.1A SOT23-3
SI2329DS-T1-GE3
MOSFET P-CH 40V 4.1A SOT23-3
SISA18ADN-T1-GE3
MOSFET P-CH 40V 4.1A SOT23-3
2N7002E-T1-E3
MOSFET P-CH 40V 4.1A SOT23-3
SI4421DY-T1-GE3
MOSFET P-CH 40V 4.1A SOT23-3
SI7636DP-T1-GE3
MOSFET P-CH 40V 4.1A SOT23-3
What is transistor?
What is transistor?
What types of transistors in the market?
Function and properties of a transistor
Working principle of transistor
Transistor vs IC amplify
What’s a transistor used for?
Trend of transistors
What is a thyristor and what are its advantages?
What is a thyristor and what are its advantages?
What is the working principle of the thyristor?
How to measure the thyristors?
What are the classifications of thyristors?
What is the function of the thyristor?
Advantages of using thyristor
What are the main applications of thyristors?
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
