SI2309CDS-T1-GE3

Vishay Siliconix SI2309CDS-T1-GE3

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  • SI2309CDS-T1-GE3
  • Vishay Siliconix
  • MOSFET P-CH 60V 1.6A SOT23-3
  • Transistors - FETs, MOSFETs - Single
  • SI2309CDS-T1-GE3 Лист данных
  • TO-236-3, SC-59, SOT-23-3
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/SI2309CDS-T1-GE3Lead free / RoHS Compliant
  • 27454
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
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Part Number
SI2309CDS-T1-GE3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 60V 1.6A SOT23-3
Package
Tape & Reel (TR)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1W (Ta), 1.7W (Tc)
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)
Rds On (Max) @ Id, Vgs
345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
210 pF @ 30 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
TO-236-3, SC-59, SOT-23-3

SI2309CDS-T1-GE3 Гарантии

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