Vishay Siliconix SI2309CDS-T1-GE3
- SI2309CDS-T1-GE3
- Vishay Siliconix
- MOSFET P-CH 60V 1.6A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2309CDS-T1-GE3 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 27454
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SI2309CDS-T1-GE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET P-CH 60V 1.6A SOT23-3 |
Package Tape & Reel (TR) |
Series TrenchFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package SOT-23-3 (TO-236) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 1W (Ta), 1.7W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 60 V |
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) |
Rds On (Max) @ Id, Vgs 345mOhm @ 1.25A, 10V |
Vgs(th) (Max) @ Id 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 30 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case TO-236-3, SC-59, SOT-23-3 |
SI2309CDS-T1-GE3 Гарантии
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