SI2302CDS-T1-E3

Vishay Siliconix SI2302CDS-T1-E3

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  • SI2302CDS-T1-E3
  • Vishay Siliconix
  • MOSFET N-CH 20V 2.6A SOT23-3
  • Transistors - FETs, MOSFETs - Single
  • SI2302CDS-T1-E3 Лист данных
  • TO-236-3, SC-59, SOT-23-3
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/SI2302CDS-T1-E3Lead free / RoHS Compliant
  • 2319
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
SI2302CDS-T1-E3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 20V 2.6A SOT23-3
Package
Cut Tape (CT)
Series
TrenchFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
710mW (Ta)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Rds On (Max) @ Id, Vgs
57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
-
Vgs (Max)
±8V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Package_case
TO-236-3, SC-59, SOT-23-3

SI2302CDS-T1-E3 Гарантии

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