Rohm Semiconductor SCT3080ALGC11
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- SCT3080ALGC11
- Rohm Semiconductor
- SICFET N-CH 650V 30A TO247N
- Transistors - FETs, MOSFETs - Single
- SCT3080ALGC11 Лист данных
- TO-247-3
- Bulk
-
Lead free / RoHS Compliant - 1565
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SCT3080ALGC11 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description SICFET N-CH 650V 30A TO247N |
| Package Bulk |
| Series - |
| Operating Temperature 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package TO-247N |
| Technology SiCFET (Silicon Carbide) |
| Power Dissipation (Max) 134W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 30A (Tc) |
| Rds On (Max) @ Id, Vgs 104mOhm @ 10A, 18V |
| Vgs(th) (Max) @ Id 5.6V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs 48 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds 571 pF @ 500 V |
| Vgs (Max) +22V, -4V |
| Drive Voltage (Max Rds On, Min Rds On) 18V |
| Package_case TO-247-3 |
SCT3080ALGC11 Гарантии
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