GeneSiC Semiconductor S6D
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- S6D
- GeneSiC Semiconductor
- DIODE GEN PURP 200V 6A DO4
- Diodes - Rectifiers - Single
- S6D Лист данных
- DO-203AA, DO-4, Stud
- Bulk
-
Lead free / RoHS Compliant - 1381
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number S6D |
| Category Diodes - Rectifiers - Single |
| Manufacturer GeneSiC Semiconductor |
| Description DIODE GEN PURP 200V 6A DO4 |
| Package Bulk |
| Series - |
| Mounting Type Chassis, Stud Mount |
| Package / Case DO-203AA, DO-4, Stud |
| Supplier Device Package DO-4 |
| Diode Type Standard |
| Current - Average Rectified (Io) 6A |
| Voltage - Forward (Vf) (Max) @ If 1.1 V @ 6 A |
| Current - Reverse Leakage @ Vr 10 µA @ 100 V |
| Capacitance @ Vr, F - |
| Voltage - DC Reverse (Vr) (Max) 200 V |
| Speed Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) - |
| Operating Temperature - Junction -65°C ~ 175°C |
| Package_case DO-203AA, DO-4, Stud |
S6D Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о S6D ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
S6D сопутствующие товары
Комментарии
GeneSiC Semiconductor
S12G
DIODE GEN PURP 400V 12A DO4
S6G
DIODE GEN PURP 400V 12A DO4
S16BR
DIODE GEN PURP 400V 12A DO4
S12JR
DIODE GEN PURP 400V 12A DO4
S16B
DIODE GEN PURP 400V 12A DO4
S16GR
DIODE GEN PURP 400V 12A DO4
S6J
DIODE GEN PURP 400V 12A DO4
S25GR
DIODE GEN PURP 400V 12A DO4
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet
An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
