Rohm Semiconductor RSJ550N10TL
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- RSJ550N10TL
- Rohm Semiconductor
- MOSFET N-CH 100V 55A LPTS
- Transistors - FETs, MOSFETs - Single
- RSJ550N10TL Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tube
-
Lead free / RoHS Compliant - 29340
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number RSJ550N10TL |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description MOSFET N-CH 100V 55A LPTS |
| Package Tube |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package LPTS |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 100W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 55A (Ta) |
| Rds On (Max) @ Id, Vgs 16.8mOhm @ 27.5A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 6150 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4V, 10V |
| Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
RSJ550N10TL Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о RSJ550N10TL ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
RSJ550N10TL сопутствующие товары
Комментарии
Rohm Semiconductor
2SK3541T2L
MOSFET N-CH 30V 100MA VMT3
2SK3018T106
MOSFET N-CH 30V 100MA VMT3
2SK3019TL
MOSFET N-CH 30V 100MA VMT3
RUM001L02T2CL
MOSFET N-CH 30V 100MA VMT3
RK7002BT116
MOSFET N-CH 30V 100MA VMT3
RZM001P02T2L
MOSFET N-CH 30V 100MA VMT3
SCT2080KEC
MOSFET N-CH 30V 100MA VMT3
RE1C002UNTCL
MOSFET N-CH 30V 100MA VMT3
What is transistor?
What is transistor?
What types of transistors in the market?
Function and properties of a transistor
Working principle of transistor
Transistor vs IC amplify
What’s a transistor used for?
Trend of transistors
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
