Rohm Semiconductor RSD100N10TL
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- RSD100N10TL
- Rohm Semiconductor
- MOSFET N-CH 100V 10A CPT3
- Transistors - FETs, MOSFETs - Single
- RSD100N10TL Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tube
-
Lead free / RoHS Compliant - 2884
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number RSD100N10TL |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description MOSFET N-CH 100V 10A CPT3 |
| Package Tube |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package CPT3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 20W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 10A (Ta) |
| Rds On (Max) @ Id, Vgs 133mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4V, 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
RSD100N10TL Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о RSD100N10TL ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
RSD100N10TL сопутствующие товары
Комментарии
Rohm Semiconductor
RSS065N06FU6TB
MOSFET N-CH 60V 6.5A 8SOP
RCD080N25TL
MOSFET N-CH 60V 6.5A 8SOP
RSD220N06TL
MOSFET N-CH 60V 6.5A 8SOP
RSH070P05TB1
MOSFET N-CH 60V 6.5A 8SOP
R6004CNDTL
MOSFET N-CH 60V 6.5A 8SOP
RGT40NS65DGTL
MOSFET N-CH 60V 6.5A 8SOP
RGT8BM65DTL
MOSFET N-CH 60V 6.5A 8SOP
RGTH50TS65GC11
MOSFET N-CH 60V 6.5A 8SOP
What is a thyristor and what are its advantages?
What is a thyristor and what are its advantages?
What is the working principle of the thyristor?
How to measure the thyristors?
What are the classifications of thyristors?
What is the function of the thyristor?
Advantages of using thyristor
What are the main applications of thyristors?
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
