Rohm Semiconductor RS1G260MNTB
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- RS1G260MNTB
- Rohm Semiconductor
- MOSFET N-CH 40V 26A 8HSOP
- Transistors - FETs, MOSFETs - Single
- RS1G260MNTB Лист данных
- 8-PowerTDFN
- Bulk
-
Lead free / RoHS Compliant - 1331
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number RS1G260MNTB |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description MOSFET N-CH 40V 26A 8HSOP |
| Package Bulk |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package 8-HSOP |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3W (Ta), 35W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 26A (Ta) |
| Rds On (Max) @ Id, Vgs 3.3mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2988 pF @ 20 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-PowerTDFN |
RS1G260MNTB Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о RS1G260MNTB ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
RS1G260MNTB сопутствующие товары
Комментарии
Rohm Semiconductor
R5011FNJTL
MOSFET N-CH 500V 11A LPT
RS1G300GNTB
MOSFET N-CH 500V 11A LPT
RSS070P05FU6TB
MOSFET N-CH 500V 11A LPT
RUS100N02TB
MOSFET N-CH 500V 11A LPT
RSJ450N04TL
MOSFET N-CH 500V 11A LPT
RRH140P03GZETB
MOSFET N-CH 500V 11A LPT
RSJ400N06TL
MOSFET N-CH 500V 11A LPT
RCJ300N20TL
MOSFET N-CH 500V 11A LPT
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
