Rohm Semiconductor RQ5E025SNTL
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- RQ5E025SNTL
- Rohm Semiconductor
- MOSFET N-CH 30V 2.5A TSMT3
- Transistors - FETs, MOSFETs - Single
- RQ5E025SNTL Лист данных
- SC-96
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 877
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number RQ5E025SNTL |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description MOSFET N-CH 30V 2.5A TSMT3 |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SC-96 |
| Supplier Device Package TSMT3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 700mW (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs 70mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 4.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds 165 pF @ 10 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4V, 10V |
| Package_case SC-96 |
RQ5E025SNTL Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о RQ5E025SNTL ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
RQ5E025SNTL сопутствующие товары
Комментарии
Rohm Semiconductor
RQ5E040TNTL
MOSFET N-CH 30V 4A TSMT3
SCT3030KLHRC11
MOSFET N-CH 30V 4A TSMT3
RUF025N02FRATL
MOSFET N-CH 30V 4A TSMT3
RQ5E025SNTL
MOSFET N-CH 30V 4A TSMT3
RQ5E040TNTL
MOSFET N-CH 30V 4A TSMT3
RTR020P02HZGTL
MOSFET N-CH 30V 4A TSMT3
RTR030N05HZGTL
MOSFET N-CH 30V 4A TSMT3
RQ1E075XNTCR
MOSFET N-CH 30V 4A TSMT3
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic
