Toshiba Semiconductor and Storage RN1510(TE85L,F)
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- RN1510(TE85L,F)
- Toshiba Semiconductor and Storage
- TRANS 2NPN PREBIAS 0.3W SMV
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- RN1510(TE85L,F) Лист данных
- SC-74A, SOT-753
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 10216
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number RN1510(TE85L,F) |
| Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Manufacturer Toshiba Semiconductor and Storage |
| Description TRANS 2NPN PREBIAS 0.3W SMV |
| Package Tape & Reel (TR) |
| Series - |
| Mounting Type Surface Mount |
| Package / Case SC-74A, SOT-753 |
| Supplier Device Package SMV |
| Power - Max 300mW |
| Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) 100mA |
| Voltage - Collector Emitter Breakdown (Max) 50V |
| Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V |
| Frequency - Transition 250MHz |
| Resistor - Base (R1) 4.7kOhms |
| Resistor - Emitter Base (R2) - |
| Package_case SC-74A, SOT-753 |
RN1510(TE85L,F) Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о RN1510(TE85L,F) ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
RN1510(TE85L,F) сопутствующие товары
Комментарии
Toshiba Semiconductor and Storage
HN4A51JTE85LF
TRANS 2PNP 120V 0.1A SMV
HN1C03FU-A(TE85L,F
TRANS 2PNP 120V 0.1A SMV
HN2C01FU-Y(TE85L,F
TRANS 2PNP 120V 0.1A SMV
HN4B04J(TE85L,F)
TRANS 2PNP 120V 0.1A SMV
2SC4944-Y(TE85L,F)
TRANS 2PNP 120V 0.1A SMV
2SA1873-Y(TE85L,F)
TRANS 2PNP 120V 0.1A SMV
2SA1618-GR(TE85L,F
TRANS 2PNP 120V 0.1A SMV
2SC4207-Y(TE85L,F)
TRANS 2PNP 120V 0.1A SMV
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
