Rectron USA RMD1N25ES9
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- RMD1N25ES9
- Rectron USA
- MOSFET N-CHANNEL 25V 1.1A SOT363
- Transistors - FETs, MOSFETs - Single
- RMD1N25ES9 Лист данных
- 6-TSSOP, SC-88, SOT-363
- Bulk
-
Lead free / RoHS Compliant - 27886
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number RMD1N25ES9 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rectron USA |
| Description MOSFET N-CHANNEL 25V 1.1A SOT363 |
| Package Bulk |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package SOT-363 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 800mW (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 25 V |
| Current - Continuous Drain (Id) @ 25°C 1.1A (Ta) |
| Rds On (Max) @ Id, Vgs 600mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs - |
| Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 10 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
| Package_case 6-TSSOP, SC-88, SOT-363 |
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