Renesas Electronics America Inc RJU60C3SDPD-E0#J2
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- RJU60C3SDPD-E0#J2
- Renesas Electronics America Inc
- DIODE GEN PURP 600V 10A TO252
- Diodes - Rectifiers - Single
- RJU60C3SDPD-E0#J2 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 3459
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number RJU60C3SDPD-E0#J2 |
| Category Diodes - Rectifiers - Single |
| Manufacturer Renesas Electronics America Inc |
| Description DIODE GEN PURP 600V 10A TO252 |
| Package Tape & Reel (TR) |
| Series - |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package TO-252 |
| Diode Type Standard |
| Current - Average Rectified (Io) 10A |
| Voltage - Forward (Vf) (Max) @ If 2.1 V @ 30 A |
| Current - Reverse Leakage @ Vr 1 µA @ 600 V |
| Capacitance @ Vr, F - |
| Voltage - DC Reverse (Vr) (Max) 600 V |
| Speed Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) 90 ns |
| Operating Temperature - Junction 150°C (Max) |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
RJU60C3SDPD-E0#J2 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о RJU60C3SDPD-E0#J2 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
RJU60C3SDPD-E0#J2 сопутствующие товары
Комментарии
Renesas Electronics America Inc
RJU6054SDPE-00#J3
DIODE GEN PURP 600V 30A LDPAK
RJU6053WDPP-M0#T2
DIODE GEN PURP 600V 30A LDPAK
RJU6053SDPE-00#J3
DIODE GEN PURP 600V 30A LDPAK
RJU6052SDPE-00#J3
DIODE GEN PURP 600V 30A LDPAK
RJU6052SDPD-E0#J2
DIODE GEN PURP 600V 30A LDPAK
RJU4352TDPP-EJ#T2
DIODE GEN PURP 600V 30A LDPAK
RJU4352SDPE-00#J3
DIODE GEN PURP 600V 30A LDPAK
RJU4352SDPD-E0#J2
DIODE GEN PURP 600V 30A LDPAK
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
Comparator performance and application and working principle
Comparators principle Comparators Performance indexComparators sort Zero-crossing voltage comparator: A typical amplitude comparison circuit, its circuit diagram and transmission characteristic curve are shown.
Voltage comparator: The voltage comparator is obtained by changing an input of the zero-crossing comparator from ground to a fixed voltage value.
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
